三星产品列表
| 年代 | 颗粒 | 消费级产品 | 制程 | 企业级产品 | oem产品 |
|---|---|---|---|---|---|
| 2012 | 平面2D | 840Pro，840Evo | 21nm | Sm843t |
Sm841 |
| 2015 | 平面2D | 19nm | Sm951 |
||
| 2013 | 第一代V-NAND 24层 | 46nm | 845dc pro，845dc evo，sv843，pm853T |
||
| 2014 | 第二代V-NAND 32层 | 850Pro，850Evo | 46nm,3xnm | Sm863,pm863,sm865 |
|
| 2015 | 第三代V-NAND 48层 | 960evo，960pro | 3xnm,21nm | sm863a,pm863a,sm865a |
Pm871，sm961，pm961 |
| 2016 | 第四代V-NAND 64/72层 | 860Pro，860Evo，970Pro，970Evo | Sm883,pm883,883dct,863dct |
||
| 2018 | 第五代V-NAND 92/96层 | 870Evo，870 QVO，970ep | Pm897,pm893 |
||
| 2019 | 第六代V-NAND 128/136层 | 980 Pro | Pm9A1 |
||
| 2021 | 第七代V-NAND 176层 | 990 Pro | |||
| 2022 | 第八代V-NAND 236层 |
850pro/evo有32层、48层
860evo有S4(64层)、S5(92层)
970ep横跨S5(92层)、S6(136层)，PM981横跨S3(48层)、S4(64层)、S5(92层)；
980pro也有S5(92层)、S6(136层)
sm865其实跟sm863颗粒都一样，就是固件不同，冗余更多，寿命更长。
SM961 512GB和1TB型号，21nm制程48层256Gb die原生MLC，128G和256G使用的是16nm的2D NAND。
太混乱了，sm961应该跟960pro一样，但是网上查到的不一样，不知道啥回事，还有960pro，970pro层数居然查到的一样，没官方资料，都网上查的，不准勿扰，仅供参考。
具体产品详情
pm863
| Samsung PM863 Specifications | ||||||
|---|---|---|---|---|---|---|
| Capacity | 120GB | 240GB | 480GB | 960GB | 1.92TB | 3.84TB |
| Controller | Samsung “Mercury” | |||||
| NAND | Samsung 32-layer 128Gbit TLC V-NAND | |||||
| Sequential Read | 380MB/s | 520MB/s | 525MB/s | 520MB/s | 510MB/s | 540MB/s |
| Sequential Write | 125MB/s | 245MB/s | 460MB/s | 475MB/s | 475MB/s | 480MB/s |
| 4KB Random Read | 86K IOPS | 99K IOPS | 99K IOPS | 99K IOPS | 99K IOPS | 99K IOPS |
| 4KB Random Write | 5K IOPS | 10K IOPS | 17K IOPS | 18K IOPS | 18K IOPS | 18K IOPS |
| Read Power | 2.4W | 2.7W | 2.9W | 2.9W | 3.0W | 3.0W |
| Write Power | 2.1W | 2.7W | 3.8W | 3.8W | 4.0W | 4.1W |
| Endurance | 170TB | 350TB | 700TB | 1,400TB | 2,800TB | 5,600TB |
| MSRP | 125|160 | 290|550 | 1100|2200 | |||
| Warranty | Three years |
PM863 是三星 845DC EVO 系列的后继产品，并转向更耐用和高性能的 3D V-NAND。随机写入性能有 40-50% 的良好提升，耐久性现在约为每天 1.3 次驱动器写入，而 845DC EVO 仅提供 0.35 DWPD。
sm863
| Samsung SM863 Specifications | |||||
|---|---|---|---|---|---|
| Capacity | 120GB | 240GB | 480GB | 960GB | 1.92TB |
| Controller | Samsung “Mercury” | ||||
| NAND | Samsung 32-layer MLC V-NAND | ||||
| Sequential Read | 500MB/s | 520MB/s | 520MB/s | 520MB/s | 520MB/s |
| Sequential Write | 460MB/s | 485MB/s | 485MB/s | 485MB/s | 485MB/s |
| 4KB Random Read | 97K IOPS | 97K IOPS | 97K IOPS | 97K IOPS | 97K IOPS |
| 4KB Random Write | 12K IOPS | 20K IOPS | 26K IOPS | 28K IOPS | 29K IOPS |
| Read Power | 2.2W | 2.2W | 2.2W | 2.2W | 2.4W |
| Write Power | 2.5W | 2.7W | 2.8W | 2.9W | 3.1W |
| Endurance | 770TB | 1,540TB | 3,080TB | 6,160TB | 12,320TB |
| MSRP | 140|180 | 330|870 | $1260 | ||
| Warranty | Five years |
SM863 是用来取代高端 PRO 版本的。845DC PRO 已经切换到 3D V-NAND，但 SM863 将 NAND 从第一代 24 层升级到最新的 32 层设计，以提高成本效率。
SM863 实际上提供比 845DC PRO 更低的随机写入性能，这是由于减少了默认预留空间，因为 SM863 只有 12%，而 845DC PRO 为 28%。
850Pro 850Evo
| Samsung SSD 850 Pro Specifications | ||||
|---|---|---|---|---|
| Capacity | 128GB | 256GB | 512GB | 1TB |
| Controller | Samsung MEX | |||
| NAND | Samsung 2nd Gen 86Gbit 40nm MLC V-NAND | |||
| DRAM (LPDDR2) | 256MB | 512MB | 512MB | 1GB |
| Sequential Read | 550MB/s | 550MB/s | 550MB/s | 550MB/s |
| Sequential Write | 470MB/s | 520MB/s | 520MB/s | 520MB/s |
| 4KB Random Read | 100K IOPS | 100K IOPS | 100K IOPS | 100K IOPS |
| 4KB Random Write | 90K IOPS | 90K IOPS | 90K IOPS | 90K IOPS |
| Power | 2mW (DevSLP) / 3.3W (read) / 3.0W (write) | |||
| Encryption | AES-256, TCG Opal 2.0 & IEEE-1667 (eDrive supported) | |||
| Endurance | 150TB | |||
| Warranty | 10 years | |||
| Availability | July 21st |
三星表示他们在内部测试中有一个 128GB 850 Pro，写入量超过 8 PB（即 8,000TB），并且该驱动器仍在继续运行。
V-NAND 的另一个有趣的方面是其每个芯片的奇数容量。传统上，NAND 容量为 2 的幂，例如 64Gbit 和 128Gbit，但三星的 V-NAND 正在终结这一趋势。第二代 32 层 V-NAND 容量为 86Gbit 或 10.75GB（如果您更喜欢千兆字节形式）。
| NAND Configurations | ||||
|---|---|---|---|---|
| 128GB | 256GB | 512GB | 1TB | |
| # of NAND Packages | 4 (?) | 4 | 8 (?) | 8 |
| Package Configurations | 2 x 4 x 86Gbit 2 x 2 x 86Gbit | 2 x 8 x 86Gbit 2 x 4 x 86Gbit | 4 x 8 x 86Gbit 4 x 4 x 86Gbit | 4 x 16 x 86Gbit 4 x 8 x 86Gbit |
| Raw NAND Capacity | 129GiB | 258GiB | 516GiB | 1032GiB |
| Over-Provisioning | 7.6% | 7.6% | 7.6% | 7.6% |
850Pro 2T版本使用了128Gbit颗粒，其他版本使用的是86Gbit颗粒。
| Samsung 2TB SSD Specifications | ||
|---|---|---|
| Model | 850 PRO | 850 EVO |
| Controller | Samsung MHX | |
| NAND | Samsung 128Gbit 40nm MLC V-NAND 32-layers | Samsung 128Gbit 40nm TLC V-NAND 32-layers |
| DRAM (LPDDR3) | 2GB | |
| Sequential Read | 550MB/s | 540MB/s |
| Sequential Write | 520MB/s | 520MB/s |
| 4KB Random Read | 100K IOPS | 98K IOPS |
| 4KB Random Write | 90K IOPS | 90K IOPS |
| Power | 5mW (DevSLP) / 3.3W (read) / 3.4W (write) | 5mW (DevSLP) / 3.7W (read) / 4.7W (write) |
| Encryption | AES-256, TCG Opal 2.0 & IEEE-1667 (eDrive supported) | |
| Endurance | 300TB | 150TB |
| Warranty | 10 years | 5 years |
| Price | 1000|800 |
sm961 pm961 950pro sm951 pm951
| Samsung SSD Comparison | ||||||
|---|---|---|---|---|---|---|
| SM961 | PM961 | 950 Pro 512 GB | SM951-NVMe 512 GB (OEM) | PM951-NVMe 512 GB (OEM) | 850 Pro 512 GB | |
| Form Factor | M.2 2280 | 2.5″ SATA | ||||
| Controller | Samsung Polaris | Samsung UBX | unknown | Samsung MEX | ||
| Interface | PCIe 3.0 x4 | SATA III | ||||
| Protocol | NVMe | AHCI | ||||
| DRAM | unknown | 512 MB | 512 MB | 512 MB | 512MB | |
| NAND | Samsung MLC V-NAND | Samsung TLC V-NAND | Samsung V-NAND 32-layer 128Gbit MLC | Samsung 16nm 64Gbit MLC | Samsung TLC NAND flash | Samsung V-NAND 32-layer 86Gbit MLC |
| Sequential Read | 3200 MB/s | 3000 MB/s | 2500 MB/s | 2150 MB/s | 1050 MB/s | 550 MB/s |
| Sequential Write | 1800 MB/s | 1150 MB/s | 1500 MB/s | 1550 MB/s | 560 MB/s | 520 MB/s |
| 4KB Random Read (QD32) | 450K IOPS | 360K IOPS | 300K IOPS | 300K IOPS | 250K IOPS | 100K IOPS |
| 4KB Random Write (QD32) | 400K IOPS | 280K IOPS | 110K IOPS | 100K IOPS | 144K IOPS | 90K IOPS |
| Launch Date | 2H 2016 | October 2015 | ~June 2015 | 2015 | July 2014 |
| Samsung SSD Comparison | |||||||
|---|---|---|---|---|---|---|---|
| 960 PRO | 960 EVO | SM961 | PM961 | 950 Pro | SM951- NVMe | PM951- NVMe | |
| Form Factor | M.2 2280 | ||||||
| Controller | Samsung Polaris | Samsung Polaris | Samsung UBX | unknown | |||
| Interface | PCIe 3.0 x4 | ||||||
| Protocol | NVMe | ||||||
| NAND | Samsung 48-layer MLC V-NAND | Samsung 48-layer TLC V-NAND | Samsung MLC NAND | Samsung TLC NAND | Samsung 32-layer MLC V-NAND | Samsung 16nm MLC | Samsung 16nm TLC |
| Capacity | 512GB, 1TB, 2TB | 250GB, 500GB, 1TB | 128GB, 256GB, 512GB, 1TB | 128GB, 256GB, 512GB, 1TB | 256GB, 512GB | 128GB, 256GB, 512GB | 128GB, 256GB, 512GB |
| Sequential Read | 3500 MB/s | 3200 MB/s | 3200 MB/s | 3000 MB/s | 2500 MB/s | 2150 MB/s | 1050 MB/s |
| Sequential Write | 2100 MB/s | 1900 MB/s | 1800 MB/s | 1150 MB/s | 1500 MB/s | 1550 MB/s | 560 MB/s |
| 4KB Random Read (QD32) | 440k IOPS | 380k IOPS | 450k IOPS | 360k IOPS | 300k IOPS | 300k IOPS | 250k IOPS |
| 4KB Random Write (QD32) | 360k IOPS | 360k IOPS | 400k IOPS | 280k IOPS | 110k IOPS | 100k IOPS | 144k IOPS |
| Launch Date | October 2016 | 2H 2016 | October 2015 | ~June 2015 | 2015 |
960pro 960evo
| Samsung 960 PRO Specifications Comparison | |||||
|---|---|---|---|---|---|
| 960 PRO 2TB | 960 PRO 1TB | 960 PRO 512GB | 950 PRO 512GB | 950 PRO 256GB | |
| Form Factor | single-sided M.2 2280 | single-sided M.2 2280 | |||
| Controller | Samsung Polaris | Samsung UBX | |||
| Interface | PCIe 3.0 x4 | ||||
| NAND | Samsung 48-layer 256Gb MLC V-NAND | Samsung V-NAND 32-layer 128Gbit MLC | |||
| Sequential Read | 3500 MB/s | 3500 MB/s | 3500 MB/s | 2500MB/s | 2200MB/s |
| Sequential Write | 2100 MB/s | 2100 MB/s | 2100 MB/s | 1500MB/s | 900MB/s |
| 4KB Random Read (QD32) | 440k IOPS | 440k IOPS | 330k IOPS | 300k IOPS | 270k IOPS |
| 4KB Random Write (QD32) | 360k IOPS | 360k IOPS | 330k IOPS | 110k IOPS | 85k IOPS |
| Power | 5.8W (average) | 5.3W (average) | 5.1W (average) | 7.0W (burst) 5.7W (average) 1.7W (idle) | 6.4W (burst) 5.1 (average) 1.7W (idle) |
| Endurance | 1200TB | 800TB | 400TB | 400TB | 200TB |
| Warranty | 5 Year | 5 Year | |||
| Launch MSRP | 1299|629 | 329.99|350 | $200 |
960evo
| Samsung 960 EVO Specifications Comparison | |||||
|---|---|---|---|---|---|
| 960 EVO 1TB | 960 EVO 500GB | 960 EVO 250GB | 950 PRO 512GB | 950 PRO 256GB | |
| Form Factor | single-sided M.2 2280 | single-sided M.2 2280 | |||
| Controller | Samsung Polaris | Samsung UBX | |||
| Interface | PCIe 3.0 x4 | ||||
| NAND | Samsung 48-layer 256Gb TLC V-NAND | Samsung V-NAND 32-layer 128Gbit MLC | |||
| SLC Cache Size | 42GB | 22 GB | 13GB | N/A | |
| Sequential Read | 3200 MB/s | 3200 MB/s | 3200 MB/s | 2500MB/s | 2200MB/s |
| Sequential Write (SLC Cache) | 1900 MB/s | 1800 MB/s | 1500 MB/s | 1500MB/s | 900MB/s |
| Sequential Write (sustained) | 1200 MB/s | 600 MB/s | 300 MB/s | N/A | N/A |
| 4KB Random Read (QD32) | 380k IOPS | 330k IOPS | 330k IOPS | 300k IOPS | 270k IOPS |
| 4KB Random Write (QD32) | 360k IOPS | 330k IOPS | 300k IOPS | 110k IOPS | 85k IOPS |
| Power | 5.7W (average) | 5.4W (average) | 5.3W (average) | 7.0W (burst) 5.7W (average) 1.7W (idle) | 6.4W (burst) 5.1 (average) 1.7W (idle) |
| Endurance | 400TB | 200TB | 100TB | 400TB | 200TB |
| Warranty | 3 Year | 5 Year | |||
| Launch MSRP | 479|249 | 129.88|350 | $200 |
sm863与sm863a对比
Pm863:
Sm863:
pm863a与sm863a:
上面截图来自官方文档pdf中
发现sm863性能比sm863a好一点点，估计三星带a的，就是降本的版本?
Sm863:
Samsung 40nm 32-layer V-NAND，属于Samsung第二代V-NAND，型号K9PKGY8S7A，单颗容量128GB
Sm863a：
主控：Samsung S4LP052X01-8030（即MHX主控）。
缓存：Samsung K4E4E324EE-EGCF LPDDR3-1866 512MB DRAM。
闪存：Samsung K9HKGY8S5M-CCK0 1Tb 48-layer MLC QDP NAND，QDP=Quad-Die Package
sm883与pm883
sm883
pm883
883dct 基本就等同于pm883
| Form Factor | 7mm, 2.5” | ||||
|---|---|---|---|---|---|
| Interface | SATA 6.0Gbps | ||||
| NAND | Samsung V-NAND | ||||
| Capacity | 3.84TB | 1.92TB | 960GB | 480GB | 240GB |
| Performance | |||||
| Sequential Read (128KB) | Up to 560MB/s | Up to 560MB/s | Up to 560MB/s | Up to 560MB/s | Up to 560MB/s |
| Sequential Write (128KB) | Up to 520MB/s | Up to 520MB/s | Up to 520MB/s | Up to 520MB/s | Up to 320MB/s |
| Random Read (4KB, QD32) | Up to 98K IOPS | Up to 98K IOPS | Up to 98K IOPS | Up to 98K IOPS | Up to 98K IOPS |
| Random Write (4KB, QD32) | Up to 28K IOPS | Up to 28K IOPS | Up to 28K IOPS | Up to 24K IOPS | Up to 14K IOPS |
| QoS Read (99.99%, 4KB, QD1) | Up to 0.5ms | Up to 0.5ms | Up to 0.5ms | Up to 0.5ms | Up to 0.5ms |
| QoS Write (99.99%, 4KB, QD1) | Up to 0.3ms | Up to 0.3ms | Up to 0.3ms | Up to 0.3ms | Up to 0.3ms |
| Encryption support | AES 256-bit Encryption Engine | ||||
| Endurance | |||||
| MTBF | 2 million hours | ||||
| UBER | 1 sector per 10^17 bits read | ||||
| Warranty | 5-year limited or 0.8 DWPD whichever comes first | ||||
| Power consumption | |||||
| Active Ready Typical | Up to 3.6W | ||||
| Active Write Typical | Up to 2.3W | ||||
| Idle | Up to 1.3W | ||||
| Allowable voltage | 5.0V ± 5% | ||||
| Operating Temperature | 0-70°C | ||||
| Shock | 1500G, duration 0.5ms, Half Sine Wave | ||||
| Physical | |||||
| Dimensions (WxDxH) | Max. 100.2 x 69.85 x 6.8 (mm) | ||||
| Weight | Max. 70g |
Samsung 883 DCT SATA SSD Review
860dct 883dct低配版
| Model Number | MZ-76E960E | MZ-76E1T9E | MZ-76E3T8E |
|---|---|---|---|
| Form Factor | 2.5” | ||
| Capacity | 960GB | 1.92TB | 3.84TB |
| Interface | SATA 6Gb/s | ||
| Controller | Samsung MJX | ||
| NAND | Samsung V-NAND 3-bit MLC | ||
| DRAM Cache (Samsung) | 1GB LPDDR SDRAM | 2GB LPDDR SDRAM | 4GB LPDDR SDRAM |
| Performance | |||
| 4KB Sequential Read | 550MB/s | ||
| 4KB Sequential Write | 520MB/s | ||
| 4KB Random Read | 98K IOPS | ||
| 4KB Random Write | 19K IOPS | ||
| Endurance | |||
| MTBF | 1.5 million hours | ||
| TBW | 349TB | 698TB | 1,396TB |
| Warranty | 3-year limited | ||
| Power Consumption | |||
| Active | 2.9W | 2.95W | |
| Idle | 1.05W | ||
| Temperature | |||
| Operating | 32 ̊ ~ 158 ̊F (0 ̊C ~ 70 ̊C) | ||
| Non-operating | -49 ̊ ~ 185 ̊F (-45 ̊C to 85 ̊C) | ||
| Humidity | 5% to 95%, Non-Condensing | ||
| Vibration (Non-operating) | 20-2000Hz, 20G | ||
| Shock (Non-operating) | 1500G, Duration 0.5 m/sec, Half-Sine | ||
| Physical | |||
| WxHxD | 3.94″ x 2.75″ x 0.27″ | ||
| Weight | 51g | 60g | 62g |
消费端860,850对比
840固件门
SM843T存在固件门的严重缺陷。固件门是发生在三星840系列产品身上的三星固件Bug，主要是长时间存放的数据会因为不经常使用而变得调取异常缓慢。此掉速是物理性丢失，如果想要恢复性能，需要将原始数据重新复制一份，旧数据删除来解决，但是这个复制过程异常缓慢。之后三星通过魔术师软件提供了840系列的固件升级，在固件加入数据内循环指令。就相当于在煮粥的锅里，放了一个不停搅动的勺子，让数据不停的动来动去。后来840产品一度被吐槽，好在850出来完全解决了这个固件门事件。
因为840Evo/Pro可以进行固件升级，通过固件升级，可以更改TRIM算法基本上解决了数据丢失的问题。但SM与PM系列并没有对应的升级软件，SM843T同样受到固件门的影响。
固态硬盘寿命原理
闪存单元每次写入或擦除的施加电压过程都会导致绝缘体硅氧化物的物理损耗。也正因为如此，硅氧化物越来越薄，电子可能会滞留在二氧化硅绝缘层，擦写时间也会因此延长，因为在达到何时的电压之前需要更长时间、更高的加压。主控制器是无法改变编程和擦写电压的。如果原本设计的电压值工作异常，主控就会尝试不同的电压，这自然需要时间，也会给硅氧化物带来更多压力，加速了损耗。最后，主控控制编程和擦写一个TLC闪存单元所需要的时间也越来越长，最终达到严重影响性能、无法接受的地步，闪存区块也就废了。
SLC有2个电压状态，MLC有4个电压状态，TLC有8个电压状态，SLC、MLC寿命可以说靠的是NAND自身素质，而TLC的寿命主要就是靠LDPC纠错（不去刷新数据）。到但是，制程越短，Cell单元之间的干扰现象更加严重，如果数据长时间不刷新的话就会出现像之前三星840 Evo那样的读取旧文件会掉速的现象。
3D Nand相比于2D颗粒优点
存储密度
这一点很好解释，堆叠层数增加了，当然密度就增加了，单个颗粒的容量也就变大了。
寿命长
三星3D NAND采用了多层堆叠的闪存单元。与传统的2D NAND相比，3D NAND采用了多层堆叠的闪存单元，这可以大大提高存储密度。具体来说，三星的3D NAND技术采用了64层、96层甚至更多的闪存单元，这就使得每个芯片的存储容量更大。由于每个芯片的存储容量更大，因此系统需要使用更少的闪存芯片来存储同样数量的数据，这会减少每个芯片上的写入次数，从而延长其使用寿命。
寿命问题完全不用担心，
850pro256g外网就有人测试，跑了9.1PB才挂掉，基本就35000次P/E，完全不用担心寿命问题
MLC与TLC优缺点
其他的不想说，网上都有，其实到这个时候已经没必要纠结，毕竟现在都是TLC的天下了。
970Pro是最后一代民用级mlc颗粒，企业级sm883是最后一代。
电压：
tlc电压相对于同样颗粒的mlc产品电压高
比如sm863为5V*1.8A，pm863为5V*1.9A
sm883为5V*1.1A，pm883为5V*1.8A
840pro为5V*1.5A，840为5V*1.7A
总结
只收集m2，SATA接口的，方便闲鱼上面捡垃圾，对于半高PCI-E卡，U2接口，m2 110的等产品未收集，上述的垃圾不想捡。
